December 28, 2020 article Open access A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon Advanced Materials DOI: 10.1002/adma.202007792 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 6 stored of 156 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Influence of Metal–Organic Chemical Vapor Deposition MoS2 Material Properties on Memristor Resistance State and Switching Voltage Variability 2026 ACS Applied Electronic Materials article Engineering Advanced Memory and Neural Computing 0 citations Quantum tunnelling and leakage current across two-dimensional materials 2026 Nature Materials article Materials Science 2D Materials and Applications Open access 1 citations Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS 2 Memristors 2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 2 citations Integration of Low‐Voltage Nanoscale MoS 2 Memristors on CMOS Microchips 2026 Advanced Functional Materials article Engineering Advanced Memory and Neural Computing Open access 3 citations Unraveling the dynamics of conductive filaments in MoS2-based memristors by operando transmission electron microscopy 2025 Nature Communications article Engineering Advanced Memory and Neural Computing Open access 21 citations Uniformity, Linearity, and Symmetry Enhancement in TiO x /MoS 2– x O x Based Analog RRAM via S-Vacancy Confined Nanofilament 2024 Nano Letters article Engineering Advanced Memory and Neural Computing 24 citations 6 results References 0