July 29, 2020 article Artificial Nociceptor Using 2D MoS2 Threshold Switching Memristor IEEE Electron Device Letters DOI: 10.1109/led.2020.3012831 OpenAlex Authors 0 Author list not loaded yet. Cited by 2 stored of 87 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Reduced Variability in Threshold Switches Using Heterostructures of SiO x and Vertically Aligned MoS 2 2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 2 citations Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration 2025 npj 2D Materials and Applications article Engineering Advanced Memory and Neural Computing Open access 7 citations 2 results References 0