Studying the switching variability in redox-based resistive switching devices

• Identifying and understanding the nonlinear behavior of memristive devices

  2024 Scientific Reports article Engineering Advanced Memory and Neural Computing Open access

  13

  citations
• Conductance quantization in h-BN memristors

  2023 Applied Physics Letters article Engineering Advanced Memory and Neural Computing

  13

  citations
• Variability in Resistive Memories

  2023 Advanced Intelligent Systems article Engineering Advanced Memory and Neural Computing Open access

  197

  citations
• Device Modeling Bias in ReRAM-Based Neural Network Simulations

  2023 IEEE Journal on Emerging and Selected Topics in Circuits and Systems article Engineering Advanced Memory and Neural Computing Open access

  5

  citations
• A high throughput generative vector autoregression model for stochastic synapses

  2022 Frontiers in Neuroscience article Engineering Advanced Memory and Neural Computing Open access

  7

  citations
• Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering

  2022 Nanoscale Research Letters article Engineering Advanced Memory and Neural Computing Open access

  37

  citations
• Lithium incorporation enhanced resistive switching behaviors in lithium lanthanum titanium oxide-based heterostructure

  2022 Journal of Material Science and Technology article Engineering Advanced Memory and Neural Computing

  8

  citations
• Data-driven RRAM device models using Kriging interpolation

  2022 Scientific Reports article Engineering Advanced Memory and Neural Computing Open access

  18

  citations
• Heteroscedastic Gaussian Process Regression for ReRAM Device Modeling

  2022 IEEE Electron Devices Technology & Manufacturing Conference (EDTM) conference-paper Engineering Advanced Memory and Neural Computing

  1

  citations
• Memristive-based in-memory computing: from device to large-scale CMOS integration

  2021 Neuromorphic Computing and Engineering article Engineering Advanced Memory and Neural Computing Open access

  10

  citations
• Nanoionic memristive phenomena in metal oxides: the valence change mechanism

  2021 Advances In Physics article Engineering Advanced Memory and Neural Computing

  195

  citations

11 results

• Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

  2009 Advanced Materials article Engineering Advanced Memory and Neural Computing

  5,109

  citations
• A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

  2011 Nature Materials article Engineering Advanced Memory and Neural Computing

  2,227

  citations
• PRIME

  2016 ACM SIGARCH Computer Architecture News article Engineering Advanced Memory and Neural Computing

  1,253

  citations
• Reproducible resistance switching in polycrystalline NiO films

  2004 Applied Physics Letters article Engineering Advanced Memory and Neural Computing

  941

  citations
• Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

  2016 Semiconductor Science and Technology article Engineering Advanced Memory and Neural Computing Open access

  910

  citations
• Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

  2014 Nature Communications article Engineering Advanced Memory and Neural Computing Open access

  669

  citations
• PRIME: A Novel Processing-in-Memory Architecture for Neural Network Computation in ReRAM-Based Main Memory

  2016 ACM/IEEE International Symposium on Computer Architecture (ISCA) conference-paper Engineering Advanced Memory and Neural Computing

  572

  citations
• Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

  2011 IEEE Transactions on Electron Devices article Engineering Advanced Memory and Neural Computing

  546

  citations
• On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

  2012 IEEE Transactions on Electron Devices article Engineering Advanced Memory and Neural Computing

  355

  citations
• Physics of the Switching Kinetics in Resistive Memories

  2015 Advanced Functional Materials article Engineering Advanced Memory and Neural Computing

  302

  citations
• Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

  2011 Applied Physics Letters article Engineering Advanced Memory and Neural Computing

  290

  citations
• Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

  2008 Applied Physics Letters article Engineering Advanced Memory and Neural Computing

  272

  citations
• On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

  2012 IEEE Transactions on Electron Devices article Engineering Advanced Memory and Neural Computing

  225

  citations
• Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching

  2015 IEEE Transactions on Electron Devices article Engineering Advanced Memory and Neural Computing Open access

  219

  citations
• Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

  2009 IEEE Electron Device Letters article Engineering Advanced Memory and Neural Computing

  178

  citations
• Impact of oxygen exchange reaction at the ohmic interface in Ta 2 O 5 -based ReRAM devices

  2016 Nanoscale article Engineering Advanced Memory and Neural Computing

  137

  citations
• On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

  2010 Electrochemical and Solid-State Letters article Engineering Advanced Memory and Neural Computing

  125

  citations
• ReRAM-Based Processing-in-Memory Architecture for Recurrent Neural Network Acceleration

  2018 IEEE Transactions on Very Large Scale Integration (VLSI) Systems article Engineering Advanced Memory and Neural Computing

  123

  citations
• Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

  2010 Solid-State Electronics article Engineering Advanced Memory and Neural Computing

  111

  citations
• Electron-Injection-Assisted Generation of Oxygen Vacancies in Monoclinic HfO 2

  2015 Physical Review Applied article Engineering Semiconductor materials and devices

  88

  citations