January 01, 2018 article Open access A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory IEEE Journal of the Electron Devices Society DOI: 10.1109/jeds.2018.2805285 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 1 stored of 51 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Understanding Transistor Aging Impact on the Behavior of RRAM Cells 2024 IFIP/IEEE International Conference on Very Large Scale Integration conference-paper Engineering Advanced Memory and Neural Computing 4 citations 1 result References 0