July 08, 2016 article High Mobility MoS 2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer Advanced Materials DOI: 10.1002/adma.201602757 OpenAlex Authors 0 Author list not loaded yet. Cited by 2 stored of 552 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Emerging reconfigurable electronic devices based on two‐dimensional materials: A review 2022 InfoMat article Materials Science 2D Materials and Applications Open access 108 citations Nanoelectromechanical Sensors Based on Suspended 2D Materials 2020 Research article Engineering Advanced MEMS and NEMS Technologies Open access 175 citations 2 results References 0