March 31, 2014 article High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors ACS Nano DOI: 10.1021/nn5009929 OpenAlex Authors 0 Author list not loaded yet. Cited by 2 stored of 322 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access CVD graphene contacts for lateral heterostructure MoS2 field effect transistors 2024 npj 2D Materials and Applications article Materials Science 2D Materials and Applications Open access 21 citations Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe 2 and n‐type MoS 2 2024 physica status solidi (a) article Materials Science 2D Materials and Applications Open access 15 citations 2 results References 0