December 01, 2015 conference-paper Intrinsic program instability in HfO2 RRAM and consequences on program algorithms DOI: 10.1109/iedm.2015.7409648 OpenAlex Authors 0 Author list not loaded yet. Cited by 15 stored of 80 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Reliability challenges for resistive random-access memory-based parallel logic computing 2026 npj Unconventional Computing article Engineering Advanced Memory and Neural Computing Open access 0 citations Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation 2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 0 citations Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration 2025 IEEE Access article Engineering Advanced Memory and Neural Computing Open access 4 citations Evaluation Methods for ReRAM Potentiation on Sub-Nanosecond Timescales 2024 IEEE Transactions on Electron Devices article Engineering Advanced Memory and Neural Computing Open access 6 citations Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory 2023 physica status solidi (a) article Engineering Advanced Memory and Neural Computing Open access 22 citations Memristive Devices for Time Domain Compute-in-Memory 2022 IEEE Journal on Exploratory Solid-State Computational Devices and Circuits article Engineering Advanced Memory and Neural Computing Open access cited by 1 patent 18 citations Effect of electron conduction on the read noise characteristics in ReRAM devices 2022 APL Materials article Engineering Advanced Memory and Neural Computing Open access 24 citations A high throughput generative vector autoregression model for stochastic synapses 2022 Frontiers in Neuroscience article Engineering Advanced Memory and Neural Computing Open access 7 citations Theory and Technology of Memristive Devices 2022 Wiley Encyclopedia of Electrical and Electronics Engineering reference-entry Engineering Advanced Memory and Neural Computing 0 citations Reliability aspects of binary vector-matrix-multiplications using ReRAM devices 2022 Neuromorphic Computing and Engineering article Engineering Advanced Memory and Neural Computing Open access 35 citations Endurance of 2 Mbit Based BEOL Integrated ReRAM 2022 IEEE Access article Engineering Advanced Memory and Neural Computing Open access 16 citations A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices 2021 ACS Applied Materials & Interfaces article Engineering Advanced Memory and Neural Computing Open access 37 citations Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns 2021 Frontiers in Neuroscience article Engineering Advanced Memory and Neural Computing Open access 35 citations Nanoionic memristive phenomena in metal oxides: the valence change mechanism 2021 Advances In Physics article Engineering Advanced Memory and Neural Computing 195 citations HRS Instability in Oxide-Based Bipolar Resistive Switching Cells 2020 IEEE Transactions on Electron Devices article Engineering Advanced Memory and Neural Computing 57 citations 15 results References 0