December 28, 2015 article Open access Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results Applied Physics Letters DOI: 10.1063/1.4937575 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 1 stored of 38 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures 2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access 26 citations 1 result References 0