January 01, 2011 article Field effect transistor based on single crystalline InSb nanowire Journal of Materials Chemistry DOI: 10.1039/c0jm03855e OpenAlex Authors 0 Author list not loaded yet. Cited by 3 stored of 62 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Vertical GeSn nanowire MOSFETs for CMOS beyond silicon 2023 Communications Engineering article Engineering Advancements in Semiconductor Devices and Circuit Design Open access cited by 1 patent 50 citations CMOS Beyond Silicon: Vertical GeSn Nanowire MOSFETs 2022 Research Square preprint Engineering Advancements in Semiconductor Devices and Circuit Design Open access 1 citations Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires 2020 Semiconductor Science and Technology article Physics and Astronomy Quantum and electron transport phenomena Open access 8 citations 3 results References 0