June 17, 2011 article An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation IEEE Transactions on Electron Devices DOI: 10.1109/ted.2011.2147791 OpenAlex Authors 0 Author list not loaded yet. Cited by 5 stored of 818 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Technology Roadmap of Bioinspired Computing Hardware 2026 ACS Nano article Engineering Advanced Memory and Neural Computing Open access 13 citations Electrochemical‐Memristor‐Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges 2023 Advanced Materials article Engineering Advanced Memory and Neural Computing Open access 180 citations Standards for the Characterization of Endurance in Resistive Switching Devices 2021 ACS Nano article Engineering Advanced Memory and Neural Computing Open access 265 citations Nanoionic memristive phenomena in metal oxides: the valence change mechanism 2021 Advances In Physics article Engineering Advanced Memory and Neural Computing 195 citations Picosecond multilevel resistive switching in tantalum oxide thin films 2020 Scientific Reports article Engineering Advanced Memory and Neural Computing Open access 60 citations 5 results References 0