March 28, 2011 article Improving GaN‐on‐silicon properties for GaN device epitaxy Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics DOI: 10.1002/pssc.201001137 OpenAlex Authors 0 Author list not loaded yet. Cited by 1 stored of 69 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures 2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access 26 citations 1 result References 0