October 06, 2014 article Bias-temperature instability in single-layer graphene field-effect transistors Applied Physics Letters DOI: 10.1063/1.4897344 OpenAlex Authors 0 Author list not loaded yet. Cited by 5 stored of 47 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Multi-project wafer runs for electronic graphene devices in the European 2D-Experimental Pilot Line project 2025 Nature Communications article Materials Science Graphene research and applications Open access 26 citations Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators 2024 npj 2D Materials and Applications article Materials Science Graphene research and applications Open access 13 citations Variability and High Temperature Reliability of Graphene Field-Effect Transistors with Thin Epitaxial CaF2 Insulators 2024 Research Square preprint Materials Science Graphene research and applications Open access 0 citations Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning 2022 Nature Electronics article Materials Science Graphene research and applications Open access 140 citations Insulators for 2D nanoelectronics: the gap to bridge 2020 Nature Communications article Materials Science 2D Materials and Applications Open access cited by 3 patents 561 citations 5 results References 0