January 01, 2026 preprint Open access Towards analog resistive switching by using multi-layered RRAM devices based on HfO2, Al2O3, TiO2 materials SSRN Electronic Journal DOI: 10.2139/ssrn.6966666 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 0 stored of 0 References 1 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories 2021 Advanced Materials article Engineering Advanced Memory and Neural Computing Open access 72 citations 1 result