W6944263142

• Degradation Diagnosis During Active Power Cycling via Frequency-Domain Thermal Impedance Spectroscopy

  2023 International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) conference-paper Engineering Silicon Carbide Semiconductor Technologies cited by 2 patents

  2

  citations
• Utilizing Electroluminescence of Silicon IGBTs for Junction Temperature Sensing

  2023 International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) conference-paper Engineering Silicon Carbide Semiconductor Technologies

  2

  citations
• Evaluating On-State Voltage and Junction Temperature Monitoring Concepts for Wide-Bandgap Semiconductor Devices

  2022 IEEE Transactions on Industry Applications article Engineering Silicon Carbide Semiconductor Technologies Open access

  11

  citations
• Online Junction-Temperature Extraction Method for SiC MOSFETs Utilizing Turn-on Delay

  2021 IEEE Workshop on Wide Bandgap Power Devices and Applications conference-paper Engineering Silicon Carbide Semiconductor Technologies cited by 1 patent

  9

  citations
• Intelligent Monitoring and Maintenance Technology for Next-Generation Power Electronic Systems

  2021 IEEE Journal of Emerging and Selected Topics in Power Electronics article Engineering Reliability and Maintenance Optimization cited by 3 patents

  21

  citations
• Online Junction Temperature Monitoring of Power Semiconductor Devices Based on a Wheatstone Bridge

  2021 IEEE Energy Conversion Congress and Exposition (ECCE) conference-paper Engineering Silicon Carbide Semiconductor Technologies Open access

  9

  citations
• Junction-Temperature Sensing of Paralleled SiC MOSFETs Utilizing Temperature Sensitive Optical Parameters

  2021 IEEE Energy Conversion Congress and Exposition (ECCE) conference-paper Engineering Silicon Carbide Semiconductor Technologies Open access

  11

  citations

7 results