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November 21, 2025 article Open access

A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projection

Nature Communications

DOI: 10.1038/s41467-025-66210-z Full text (OA) OpenAlex

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Microscopic origins of electron trapping in amorphous silicon nitride ( a -Si 3 N 4 ) and its role in charge-trap flash memory
2026 Journal of Physics Condensed Matter article Engineering Semiconductor materials and devices Open access

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