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August 06, 2025 article

Engineering Ferroelectric Gate Dielectric to Achieve High-Performance Multilevel Organic Transistor Nonvolatile Memories With the Programming/Erasing Voltages Below 10 V

IEEE Electron Device Letters

DOI: 10.1109/led.2025.3596226 OpenAlex

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References 2

Multiresponsive Nonvolatile Memories Based on Optically Switchable Ferroelectric Organic Field‐Effect Transistors
2021 Advanced Materials article Engineering Organic Electronics and Photovoltaics

95

citations
Ternary‐Responsive Field‐Effect Transistors and Multilevel Memories Based on Asymmetrically Functionalized Janus Few‐Layer WSe2
2021 Advanced Functional Materials article Materials Science 2D Materials and Applications

31

citations

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