An Isolated Gate Driver Enabled by Simultaneous Wireless Information and Power Transfer

IEEE Transactions on Microwave Theory and Techniques, vol. 73, pp. 3368–3375

Abstract

Wide-bandgap semiconductor devices, such as gallium nitride (GaN) or silicon carbide (SiC), are key enablers for innovative power electronic circuit topologies. However, novel types of isolated gate drivers with high common-mode transient immunity (CMTI) and high switching speed need to be developed to put these benefits into action. We propose a radio frequency gate driver (RFGD), which utilizes a single radio frequency coupling channel and simultaneous wireless information and power transfer (SWIPT) at a 2.4-GHz carrier frequency and harmonic backscattering for monitoring signal transmission. A hybrid prototype is implemented, and the measurements are demonstrated. The prototype components are validated individually, and the full system is showcased by driving the gate of an eGaN-FET in a common-drain circuit. The transferred switching signal is pulsewidth modulated (PWM) at 62.5 kHz and modulates a 2.6-kHz sine wave. The prototype draws its entire power from a single 282-mW RF input signal at this operating point. The CMTI RFGD of the prototype is discussed and related to the signal-to-noise ratio (SNR) of the receiver path.

Authors 3

1. Lukas Hüssen Aachen Chair of High Frequency Electronics

   RWTH Aachen University

   Affiliation as printed

   Chair of High Frequency Electronics, RWTH Aachen University, Aachen, Germany

2. Muh‐Dey Wei Aachen Chair of High Frequency Electronics

   RWTH Aachen University

   Affiliation as printed

   Chair of High Frequency Electronics, RWTH Aachen University, Aachen, Germany

3. Renato Negra Aachen Chair of High Frequency Electronics

   RWTH Aachen University

   Affiliation as printed

   Chair of High Frequency Electronics, RWTH Aachen University, Aachen, Germany