October 31, 2024 article Junction Temperature Extraction for Silicon Carbide Power Devices: A Comprehensive Review IEEE Transactions on Power Electronics DOI: 10.1109/tpel.2024.3486149 OpenAlex Authors 0 Author list not loaded yet. Cited by 0 stored of 36 References 1 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Online Junction-Temperature Extraction Method for SiC MOSFETs Utilizing Turn-on Delay 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications conference-paper Engineering Silicon Carbide Semiconductor Technologies cited by 1 patent 9 citations 1 result