Photovoltage junction memtransistor for optoelectronic in-memory computing

Journal of Materials Chemistry C, vol. 12, pp. 12763–12768

Abstract

The ZnO/WSe 2 memory device exhibits optoelectronic switching behavior, allowing for laser pulse-induced memory and voltage pulse-induced erasing, which represents a significant advancement in optoelectronic in-memory computing.

Authors 10

1. Xueming Li

   South China Normal University

   Affiliation as printed

   Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China

2. Sujuan Wang

   South China Normal University

   Affiliation as printed

   Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China

3. Yani Yang corresponding

   Guangdong University of Technology · South China Normal University

   Affiliation as printed

   Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China

   School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China

4. Shankun Xu Aachen

   South China Normal University · RWTH Aachen University

   Affiliation as printed

   Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China

   RWTH International Academy gGmbH, RWTH Aachen University, Aachen 52074, Germany

5. Xueyan Bao Aachen

   South China Normal University · RWTH Aachen University

   Affiliation as printed

   RWTH International Academy gGmbH, RWTH Aachen University, Aachen 52074, Germany

   Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China

6. Lei Zhao

   South China Normal University

   Affiliation as printed

   Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China

7. Xueting Liu

   South China Normal University

   Affiliation as printed

   Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China

8. Zhidong Pan

   Guangdong University of Technology · South China Normal University

   Affiliation as printed

   Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China

   School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China

9. Yujue Yang

   Guangdong University of Technology · South China Normal University

   Affiliation as printed

   Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China

   School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China

10. Nengjie Huo corresponding

    South China Normal University

    Affiliation as printed

    Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China