The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks

physica status solidi (RRL) - Rapid Research Letters, vol. 18

Abstract

Germanium–Tin Microdisks Germanium–tin microdisks are promising structures for CMOS-compatible lasing. Their emission properties depend on Sn concentration, strain, and operating temperature. Critically, the band structure of the alloy varies along the disk due to different lattice deformation. In article number 2300348, Ignatii Zaitsev, Agnieszka Anna Corley-Wiciak, Costanza Lucia Manganelli and co-workers study the mechanical and optical properties of germanium–tin microdisks by finite element simulations and experimentally by spatially-resolved optical (Raman and photoluminescence) spectroscopy and nano-X-ray diffraction. The findings correlate structural properties to the emission wavelength and spectral width of Ge1–xSnx microdisk lasers, thus demonstrating the importance of material-related considerations for the design of optoelectronic microstructures.

Authors 10

1. Ignatii Zaitsev corresponding

   Leibniz Institute for High Performance Microelectronics

   Affiliation as printed

   IHP–Leibniz-Institut für Innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany

2. Agnieszka Anna Corley‐Wiciak corresponding Aachen

   RWTH Aachen University · Leibniz Institute for High Performance Microelectronics

   Affiliation as printed

   IHP–Leibniz-Institut für Innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany

   RWTH Aachen University Templergraben 55 52062 Aachen Germany

   IHP–Leibniz-Institut für Innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany

3. Cedric Xavier Corley-Wiciak

   Leibniz Institute for High Performance Microelectronics

   Affiliation as printed

   IHP–Leibniz-Institut für Innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany

4. Marvin Hartwig Zoellner

   Leibniz Institute for High Performance Microelectronics

   Affiliation as printed

   IHP–Leibniz-Institut für Innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany

5. Carsten Richter

   Leibniz Institute for Crystal Growth

   Affiliation as printed

   IKZ – Leibniz -Institut für Kristallzüchtung Max-Born-Straße 2 D-12489 Berlin Germany

6. Edoardo M. Zatterin

   European Synchrotron Radiation Facility

   Affiliation as printed

   ESRF – European Synchrotron Radiation Facility 71, avenue des Martyrs, CS 40220 38043 Grenoble Cedex 9 France

7. Michele Virgilio

   University of Pisa

   Affiliation as printed

   Dipartimento di Fisica “Enrico Fermi” Università di Pisa Largo Bruno Pontecorvo 3 56127 Pisa Italy

8. Beatriz Martín‐García

   Ikerbasque · CIC nanoGUNE

   Affiliation as printed

   CIC nanoGUNE BRTA Tolosa Hiribidea 76, Basque Country 20018 Donostia-San Sebastián Spain

   IKERBASQUE, Basque Foundation for Science Basque Country 48009 Bilbao Spain

   CIC nanoGUNE BRTA Tolosa Hiribidea 76, Basque Country 20018 Donostia-San Sebastián Spain

9. Davide Spirito

   Leibniz Institute for High Performance Microelectronics

   Affiliation as printed

   IHP–Leibniz-Institut für Innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany

10. Costanza Lucia Manganelli corresponding

    Leibniz Institute for High Performance Microelectronics

    Affiliation as printed

    IHP–Leibniz-Institut für Innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany