Towards graphene-based asymmetric diodes: a density functional tight-binding study

Nanoscale Advances, vol. 6, pp. 1548–1555

Abstract

increased from 1.20/1.03 under no gate voltage (NGV) to 1.30/1.16 under gate voltage (WGV) conditions. Our results open up unprecedented numerical prospects for designing tailored geometric diodes.

Authors 7

1. Elaheh Mohebbi

   Marche Polytechnic University

   Affiliation as printed

   Department of Science and Engineering of Matter, Environment and Urban Planning (SIMAU), Marche Polytechnic University, 60131 Ancona, Italy

2. Eleonora Pavoni

   Marche Polytechnic University

   Affiliation as printed

   Department of Science and Engineering of Matter, Environment and Urban Planning (SIMAU), Marche Polytechnic University, 60131 Ancona, Italy

3. Luca Pierantoni

   Marche Polytechnic University

   Affiliation as printed

   Information Engineering Department, Marche Polytechnic University, 60131 Ancona, Italy

4. Pierluigi Stipa

   Marche Polytechnic University

   Affiliation as printed

   Department of Science and Engineering of Matter, Environment and Urban Planning (SIMAU), Marche Polytechnic University, 60131 Ancona, Italy

5. Andreas Hemmetter Aachen Advanced Microelectronic Center Aachen

   AMO (Germany)

   Affiliation as printed

   Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074 Aachen, Germany

6. Emiliano Laudadio corresponding

   Marche Polytechnic University

   Affiliation as printed

   Department of Science and Engineering of Matter, Environment and Urban Planning (SIMAU), Marche Polytechnic University, 60131 Ancona, Italy

7. Davide Mencarelli

   Marche Polytechnic University

   Affiliation as printed

   Information Engineering Department, Marche Polytechnic University, 60131 Ancona, Italy