January 10, 2024 article Open access Guideline for Reproducible SiC MOSFET Thermal Characterization Based on Source-Drain Voltage IEEE Transactions on Industry Applications DOI: 10.1109/tia.2024.3352548 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 2 stored of 6 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs 2024 IEEE Transactions on Power Electronics article Engineering Silicon Carbide Semiconductor Technologies Open access 7 citations A Sparsity-Promoting Time Domain Evaluation Method for Thermal Transient Measurement of Power Semiconductors 2024 IEEE Transactions on Power Electronics article Engineering Silicon Carbide Semiconductor Technologies Open access cited by 1 patent 6 citations 2 results References 0