Flexible CMOS electronics based on 2D p-type WSe2 and n-type MoS2
Abstract
Flexible electronics have been emerging in the last years for a wide variety of applications. In this scenario, transition metal dichalcogenides (TMDCs), such as molybdenum disulfide (MOS2) and tungsten diselenide (WSe2), have captured increased attention because of their complementary transport properties, and their excellent mechanical flexibility [1]. In particular, MOS2has shown good electron transport, while WSe2has predominantly shown hole transport [2]. This enables complementary metal-oxide semiconductor (CMOS) technology with its inherent advantages over its unipolar counterpart, i.e., low power dissipation and large noise immunity. Here, we demonstrate n-type MOS2and p-type WSe2field effect transistors (FETs) and combine them to form CMOS inverters on a flexible polyimide (PI) substrate.
Authors 10
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RWTH Aachen University · AMO (Germany)
Affiliation as printed
Advanced Microelectronic Center Aachen (AMICA), AMO GmbH,Aachen,Germany,52074
RWTH Aachen University, Aachen, Germany
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Affiliation as printed
TU Wien,Vienna,Austria,1040
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Affiliation as printed
Advanced Microelectronic Center Aachen (AMICA), AMO GmbH,Aachen,Germany,52074
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Annika Grundmann Aachen
Affiliation as printed
RWTH Aachen University,Aachen,Germany,52074
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M. Heuken Aachen
RWTH Aachen University · Aixtron (Germany)
Affiliation as printed
RWTH Aachen University,Aachen,Germany,52074
AIXTRON SE, Herzogenrath, Germany
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H. Kalisch Aachen
Affiliation as printed
RWTH Aachen University,Aachen,Germany,52074
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Andrei Vescan Aachen
Affiliation as printed
RWTH Aachen University,Aachen,Germany,52074
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Affiliation as printed
TU Wien,Vienna,Austria,1040
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RWTH Aachen University · AMO (Germany)
Affiliation as printed
Advanced Microelectronic Center Aachen (AMICA), AMO GmbH,Aachen,Germany,52074
RWTH Aachen University, Aachen, Germany
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Affiliation as printed
Advanced Microelectronic Center Aachen (AMICA), AMO GmbH,Aachen,Germany,52074
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