SiGeSn/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance

IEEE Silicon Photonics Conference (SiPhotonics), pp. 1–2

Abstract

This paper reports on the electrical and optical characterization of a SiGeSn/GeSn multi quantum wells light emitting diode. At low temperatures, the devices show a direct bandgap behavior of the luminescence and a resonant tunneling transport.

Authors 9

1. Lukas Seidel

   University of Stuttgart

   Affiliation as printed

   Institute of Semiconductor Engineering, University of Stuttgart,Stuttgart,Germany,70569

2. Taoran Liu
   Affiliation as printed

   Peter Grünberg Institute,Jülich,Germany,52428

3. Bahareh Marzban Aachen Institute of Integrated Photonics (IPH)

   RWTH Aachen University

   Affiliation as printed

   Institute of Integrated Photonics,RWTH Aachen,Aachen,Germany,52074

4. Vivien Kiyek
   Affiliation as printed

   Peter Grünberg Institute,Jülich,Germany,52428

5. Jörg Schulze

   Friedrich-Alexander-Universität Erlangen-Nürnberg

   Affiliation as printed

   Friedrich-Alexander-University Erlangen,Chair of Electron Devices,Erlangen,Germany,91058

6. Giovanni Capellini

   Roma Tre University

   Affiliation as printed

   Università Roma Tre,Department of Sciences,Roma,Italy,00154

7. Jeremy Witzens Aachen Institute of Integrated Photonics (IPH)

   RWTH Aachen University

   Affiliation as printed

   Institute of Integrated Photonics,RWTH Aachen,Aachen,Germany,52074

8. Dan Buca
   Affiliation as printed

   Peter Grünberg Institute,Jülich,Germany,52428

9. Michael Oehme

   University of Stuttgart

   Affiliation as printed

   Institute of Semiconductor Engineering, University of Stuttgart,Stuttgart,Germany,70569