Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga2O3
Nano Letters, vol. 23, pp. 363–370
Abstract
High Resolution Image Download MS PowerPoint Slide We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga 2 O 3 synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimeter-scale passivated and bare graphene on SiO 2 /Si indicates that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO 2 by high-dielectric-constant Ga 2 O 3 and the relatively high characteristic phonon frequencies of Ga 2 O 3 . Raman spectroscopy and electrical measurements indicate that Ga 2 O 3 passivation also protects graphene from further processing such as plasma-enhanced atomic layer deposition of Al 2 O 3 .
Authors 6
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ARC Centre of Excellence in Future Low-Energy Electronics Technologies · Monash University
Affiliation as printed
ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Melbourne, Victoria 3800, Australia
School of Physics and Astronomy, Monash University, Melbourne, Victoria 3800, Australia
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Leiden University · ARC Centre of Excellence in Future Low-Energy Electronics Technologies · Monash University
Affiliation as printed
ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Melbourne, Victoria 3800, Australia
Leiden Institute of Physics, Leiden University, Niels Bohrweg 2, 2333 CA, Leiden, The Netherlands
School of Physics and Astronomy, Monash University, Melbourne, Victoria 3800, Australia
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Affiliation as printed
School of Physics and Astronomy, Monash University, Melbourne, Victoria 3800, Australia
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The University of Melbourne · RMIT University
Affiliation as printed
School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
School of Physics, The University of Melbourne, Parkville, Melbourne, Victoria 3010, Australia
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ARC Centre of Excellence in Future Low-Energy Electronics Technologies · RMIT University
Affiliation as printed
ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT University, Melbourne, Victoria 3000, Australia
School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
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Michael S. Fuhrer corresponding
ARC Centre of Excellence in Future Low-Energy Electronics Technologies · Monash University
Affiliation as printed
ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Melbourne, Victoria 3800, Australia
School of Physics and Astronomy, Monash University, Melbourne, Victoria 3800, Australia
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