June 10, 2022 article Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks IEEE Transactions on Device and Materials Reliability DOI: 10.1109/tdmr.2022.3182133 OpenAlex Authors 0 Author list not loaded yet. Cited by 2 stored of 39 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO 2 ‐Based Memristive Devices 2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 1 citations A Fully Automated Platform for Evaluating ReRAM Crossbars 2024 IEEE Latin American Test Symposium (LATS) conference-paper Engineering Advanced Memory and Neural Computing 7 citations 2 results References 0