Determination of the temperature-dependent optical properties of amorphous silicon films at elevated temperatures

Optics Express, vol. 29, pp. 41356

Abstract

The temperature-dependent optical properties of PECVD deposited amorphous silicon films are determined for radiation wavelengths of 1000 nm up to 2000 nm in a temperature range of up to 1110 K. The measurements are performed at heating rates of over 2300 K/s in order to shift the onset of solid-phase crystallization of the amorphous material to temperatures above 1110 K and to make the optical properties of amorphous silicon accessible for examination. In this work, the laser-based measurement setup, the experimental procedure, the simulation methods, and the resulting material-specific data are shown.

Authors 4

1. Florian Fuchs Aachen Fraunhofer Institute for Laser Technology ILT

   Fraunhofer Institute for Laser Technology

   Affiliation as printed

   Fraunhofer Institute for Laser Technology ILT

2. Christian Vedder Aachen Fraunhofer Institute for Laser Technology ILT

   Fraunhofer Institute for Laser Technology

   Affiliation as printed

   Fraunhofer Institute for Laser Technology ILT

3. Jochen Stollenwerk Aachen Fraunhofer Institute for Laser Technology ILT

   RWTH Aachen University · Fraunhofer Institute for Laser Technology

   Affiliation as printed

   Fraunhofer Institute for Laser Technology ILT

   RWTH Aachen University

4. Peter Loosen Aachen Fraunhofer Institute for Laser Technology ILT

   RWTH Aachen University · Fraunhofer Institute for Laser Technology

   Affiliation as printed

   Fraunhofer Institute for Laser Technology ILT

   RWTH Aachen University