Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”

IEEE Transactions on Electron Devices, vol. 68, pp. 5925

Abstract

For the above-named article, we wish to add additional information and clarifications regarding the gates and circuits.

Authors 5

1. Barak Hoffer

   Technion – Israel Institute of Technology

   Affiliation as printed

   Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion-Israel Institute of Technology, Haifa, Israel

2. Vikas Rana

   Forschungszentrum Jülich · Jülich Aachen Research Alliance

   Affiliation as printed

   Forschungszentrum Jülich GmbH, Peter-Grünberg-Institut 10 & JARA-FIT, Jülich, Germany

3. Stephan Menzel

   Forschungszentrum Jülich · Jülich Aachen Research Alliance

   Affiliation as printed

   Peter-Grünberg-Institut 7 & JARA-FIT, Forschungszentrum Jülich GmbH, Jülich, Germany

4. Rainer M. Waser Aachen Institut für Werkstoffe der Elektrotechnik 2 & JARA-FIT

   Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University

   Affiliation as printed

   Institut für Werkstoffe der Elektrotechnik 2 & JARA-FIT, RWTH Aachen University, Aachen, Germany

   Peter-Grünberg-Institut 7 & JARA-FIT, Forschungszentrum Jülich GmbH, Jülich, Germany

5. Shahar Kvatinsky

   Technion – Israel Institute of Technology

   Affiliation as printed

   Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion-Israel Institute of Technology, Haifa, Israel