Tunable interdot coupling in few-electron bilayer graphene double quantum dots

Applied Physics Letters, vol. 118

Abstract

We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 and 4 GHz and the mutual capacitive coupling between 0.2 and 0.6 meV, independent of the charge occupation of the quantum dots. The charging energy and, hence, the dot size remain nearly unchanged. The tuning range of the tunnel coupling covers the operating regime of typical silicon and GaAs spin qubit devices.

Authors 1

1. Alexander Rothstein Aachen JARA-FIT and 2nd Institute of Physics

   RWTH Aachen University

   Affiliation as printed

   JARA-FIT and 2nd Institute of Physics, RWTH Aachen University 1 , 52074 Aachen, Germany