January 01, 2020 article Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO 2 thin films Nanoscale DOI: 10.1039/d0nr02401e OpenAlex Authors 0 Author list not loaded yet. Cited by 2 stored of 59 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes 2022 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 17 citations Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications 2021 ACS Applied Materials & Interfaces article Engineering Advanced Memory and Neural Computing Open access 71 citations 2 results References 0