The Diode-Assisted Gate-Commutated Thyristor—Operation, Design, and Testing

IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, pp. 2510–2517

Abstract

This article presents the diode-assisted gate-commutated thyristor (DAGCT), a power electronic device designed and optimized for hybrid dc circuit-breaker applications employing a fast mechanical circuit breaker. Detailed topology and operation of the DAGCT are illustrated in this article. A package and a gate drive unit (GDU) were developed. The device and the GDU were tested for a fault current of 550 A. The device turned off within${3.2} ~{\mu }\text{s}$. The performance of the DAGCT-GDU is compared with other GDUs of similar thyristor-based devices. Test setup and test results are presented and discussed.

Authors 3

1. Ala Qawasmi Aachen E.ON Energy Research Center Institute for Power Generation and Storage Systems (PGS)

   RWTH Aachen University

   Affiliation as printed

   E.ON Energy Research Center, Institute for Power Generation and Storage Systems, Research Campus Flexible Electrical Networks, RWTH Aachen University, Aachen, Germany

2. Jakob Teichrib Aachen E.ON Energy Research Center Institute for Power Generation and Storage Systems (PGS)

   RWTH Aachen University

   Affiliation as printed

   E.ON Energy Research Center, Institute for Power Generation and Storage Systems, Research Campus Flexible Electrical Networks, RWTH Aachen University, Aachen, Germany

3. Rik W. De Doncker Aachen E.ON Energy Research Center Institute for Power Generation and Storage Systems (PGS)

   RWTH Aachen University

   Affiliation as printed

   E.ON Energy Research Center, Institute for Power Generation and Storage Systems, Research Campus Flexible Electrical Networks, RWTH Aachen University, Aachen, Germany