January 01, 2017 article Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2 /HfO 2 gate dielectric stack Nanoscale DOI: 10.1039/c7nr00088j OpenAlex Authors 0 Author list not loaded yet. Cited by 1 stored of 150 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Analogue two-dimensional semiconductor electronics 2020 Nature Electronics article Materials Science 2D Materials and Applications Open access 140 citations 1 result References 0