October 06, 2016 article MoS 2 transistors with 1-nanometer gate lengths Science DOI: 10.1126/science.aah4698 OpenAlex Authors 0 Author list not loaded yet. Cited by 4 stored of 1,524 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Application of gate-to-channel capacitance measurements for extraction and investigation of the effective mobility in MoS 2 field effect transistors with hysteresis of electrical characteristics 2026 Physica Scripta article Materials Science 2D Materials and Applications Open access 0 citations Embedded Devices for Neuromorphic Time-Series Assessment 2022 Research Explorer (The University of Manchester) review Engineering Advanced Memory and Neural Computing Open access 667 citations 2022 roadmap on neuromorphic computing and engineering 2022 Neuromorphic Computing and Engineering article Engineering Advanced Memory and Neural Computing Open access 0 citations Large-area integration of two-dimensional materials and their heterostructures by wafer bonding 2021 Nature Communications article Materials Science 2D Materials and Applications Open access cited by 2 patents 213 citations 4 results References 0