October 01, 2012 article Redox-Based Resistive Switching Memories Journal of Nanoscience and Nanotechnology DOI: 10.1166/jnn.2012.6652 OpenAlex Authors 0 Author list not loaded yet. Cited by 11 stored of 116 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Accurate evaluation method for HRS retention of VCM ReRAM 2024 APL Materials article Engineering Advanced Memory and Neural Computing Open access 8 citations Eightwise Switching Mechanism in Memristive SrTiO 3 Devices and Its Implications on the Device Performance 2023 physica status solidi (a) article Engineering Advanced Memory and Neural Computing Open access 12 citations On the Plausibility of Thermodiffusion as the Primary Mechanism for Unipolar Resistive Switching in Metal-Oxide-Metal Memristive Devices 2023 International Conference on Simulation of Semiconductor Processes and Devices conference-paper Engineering Advanced Memory and Neural Computing 0 citations Sequence learning in a spiking neuronal network with memristive synapses 2023 Neuromorphic Computing and Engineering article Engineering Advanced Memory and Neural Computing Open access 4 citations A Study of the Electroforming Process in 1T1R Memory Arrays 2022 IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems article Engineering Advanced Memory and Neural Computing Open access 12 citations Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in Ta 2 O 5 -Based Resistive Switching Devices 2022 Physical Review Applied article Engineering Advanced Memory and Neural Computing 6 citations Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism 2022 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 43 citations Endurance of 2 Mbit Based BEOL Integrated ReRAM 2022 IEEE Access article Engineering Advanced Memory and Neural Computing Open access 16 citations Nanoionic memristive phenomena in metal oxides: the valence change mechanism 2021 Advances In Physics article Engineering Advanced Memory and Neural Computing 195 citations Trade-off between variability and retention of memristive epitaxial SrTiO3 devices 2021 APL Materials article Engineering Advanced Memory and Neural Computing Open access 19 citations HRS Instability in Oxide-Based Bipolar Resistive Switching Cells 2020 IEEE Transactions on Electron Devices article Engineering Advanced Memory and Neural Computing 57 citations 11 results References 0