September 23, 2015 article Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules IEEE Transactions on Power Electronics DOI: 10.1109/tpel.2015.2481465 OpenAlex Authors 0 Author list not loaded yet. Cited by 2 stored of 241 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Online Junction-Temperature Extraction Method for SiC MOSFETs Utilizing Turn-on Delay 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications conference-paper Engineering Silicon Carbide Semiconductor Technologies cited by 1 patent 9 citations Reviewing Thermal-Monitoring Techniques for Smart Power Modules 2021 IEEE Journal of Emerging and Selected Topics in Power Electronics article Engineering Silicon Carbide Semiconductor Technologies cited by 1 patent 78 citations 2 results References 0