August 11, 2015 article Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride ACS Nano DOI: 10.1021/acsnano.5b02816 OpenAlex Authors 0 Author list not loaded yet. Cited by 2 stored of 138 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Carbon-Based Field-Effect Transistors 2022 Springer handbooks book-chapter Materials Science Graphene research and applications 0 citations Simultaneous Optical Tuning of Hole and Electron Transport in Ambipolar WSe2 Interfaced with a Bicomponent Photochromic Layer: From High‐Mobility Transistors to Flexible Multilevel Memories 2020 Advanced Materials article Materials Science 2D Materials and Applications Open access 52 citations 2 results References 0