A METHOD FOR DETERMINING VALLEY-SPLITTING IN A SEMICONDUCTOR DEVICE
Abstract
A method of determining a valley splitting of a semiconductor device comprises setting a field strength of an external magnetic field B, for splitting entangled spin states associated with a double quantum dot generated in the semiconductor device; evolving the entangled spin states for an evolution period; measuring a state of the entangled spin states in a basis of the entangled spin states, the basis comprising at least two basis states; repeating the evolving and the measuring to determine a probability of the state of the entangled spin states being at least one of the at least two basis states; and assessing, based on the determined probability, the valley splitting.
Inventors 4
- Lars R. Schreiber Aachen author as filed: Schreiber, Lars Reiner
- Tom Struck Aachen author as filed: Struck, Tom
- M. Volmer Aachen author as filed: Volmer, Mats
- Bluhm, Jörg Hendrik
Inventors are linked to an Aachen author when surname and first name match exactly one author.
Applicants
- RHEINISCH-WESTFÄLISCHE TECHNISCHE HOCHSCHULE (RWTH) AACHEN RWTH Aachen University
- FORSCHUNGSZENTRUM JÜLICH GMBH
Cited papers 3 in the database
Non-patent literature as cited (4)
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- - STRUCK TOM ET AL: "Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe", NATURE COMMUNICATIONS, vol. 15, no. 1, 10 July 2023 (2023-07-10), UK, XP093149102, ISSN: 2041-1723, Retrieved from the Internet <URL:https://arxiv.org/pdf/2307.04897.pdf> DOI: 10.1038/s41467-024-45583-7
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- - VOLMER MATS ET AL: "Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling", 29 December 2023 (2023-12-29), XP093149106, Retrieved from the Internet <URL:https://arxiv.org/pdf/2312.17694.pdf> [retrieved on 20240408], DOI: 10.48550/arxiv.2312.17694