QUBIT ELEMENT
Espacenet
Family 76553756
Abstract
The invention relates to a qubit element (1) comprising: a quantum well structure (2), within which a quantum well (3) is formed along a first direction (x); an electrode assembly (4) which is designed to reduce a movement of a charge carrier in the quantum well (3) in and against a second direction (y) and in and against a third direction (z), in order to form a quantum dot (5), wherein the first direction (x), the second direction (y) and the third direction (z) are each perpendicular to one another in pairs; and a base layer (6), formed from strained silicon, which is adjacent to the quantum well structure (2) against the first direction (x).
Inventors 5
- Matthias Künne Aachen author as filed: Künne, Matthias
- Lars R. Schreiber Aachen author as filed: Schreiber, Lars
- M·库内
- L·施瑞博尔
- Kuhne, Michael
Inventors are linked to an Aachen author when surname and first name match exactly one author.
Applicants
- RHEINISCH-WESTFÄLISCHE TECHNISCHE HOCHSCHULE (RWTH) AACHEN RWTH Aachen University
- 亚琛工业大学
Cited papers 0 in the database
Non-patent literature as cited (2)
- - BOECK TORSTEN: "SiGeQuant: Kooperatives Bestreben zur Weiterentwicklung der Siliziumquantentechnologie", 3 December 2018 (2018-12-03), XP055889680, Retrieved from the Internet <URL:https://www.ikz-berlin.de/oeffentlichkeitsarbeit/aktuelles/artikel/sigequant-kooperatives-bestreben-zur-weiterentwicklung-der-siliziumquantentechnologie> [retrieved on 20220209]
- - LARS SCHREIBER等: "Single-Shot Measurement of One and Two-Electron Spin States in Si/SiGe Gated Quantum Dots", IEEE/SINGLE-SHOT MEASUREMENT OF ONE AND TWO-ELECTRON SPIN STATES IN SI/SIGE GATED QUANTUM DOTS, 25 June 2012 (2012-06-25)