OPTICALLY ACTIVE QUANTUM POINT DEFINED BY GATES
Espacenet
Family 72561542
Abstract
The invention relates to an electronic component (10) for generating and emitting electromagnetic waves or individual photons (48), comprising a layer system (12) made of semiconductor materials. A central layer (13) made of gallium arsenide is arranged between a first layer (14) made of aluminum gallium arsenide and a second layer (16) made of aluminum gallium arsenide. A first outer layer (18) made of gallium arsenide is provided on the first layer (14) made of aluminum gallium arsenide, and a second outer layer (20) made of gallium arsenide is also provided on the second layer (16) made of aluminum gallium arsenide.
Inventors 3
- Hendrik Bluhm Aachen author as filed: Bluhm, Hendrik
- Liu, Feng
- Thomas Descamps Aachen author as filed: Descamps, Thomas
Inventors are linked to an Aachen author when surname and first name match exactly one author.
Applicants
- RHEINISCH-WESTFÄLISCHE TECHNISCHE HOCHSCHULE (RWTH) AACHEN RWTH Aachen University
Cited papers 1 in the database
Non-patent literature as cited (3)
- - PHYSICAL REVIEW LETTERS, vol. 110, 22 March 2013 (2013-03-22), pages 127403
- - G. J. SCHINNER ET AL: "Electrostatically trapping indirect excitons in couplend InGaAs quantum wells", PHYS. REV. B, vol. 83, no. 16, 15 April 2011 (2011-04-15), US, XP055747431, ISSN: 1098-0121, DOI: 10.1103/PhysRevB.83.165308
- - A. A. HIGH ET AL: "Trapping Indirect Excitons in a GaAs Quantum-Well Structure with a Diamond-Shaped Electrostatic Trap", PHYSICAL REVIEW LETTERS, vol. 103, no. 8, 19 August 2009 (2009-08-19), US, XP055747440, ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.103.087403