RESISTIVE MEMORY DEVICE, MEMORY CELL, METHOD OF OPERATING MEMORY DEVICE THEREOF, CONTROL UNIT, AND COMPUTER PROGRAM
Abstract
To provide a resistive memory device having a control unit that controls a plurality of memory cells.SOLUTION: A plurality of memory cells include a first terminal, a second terminal, and a phase change segment including a phase change material that stores information in a plurality of resistance states. The phase change segment is arranged between a first terminal and a second terminal. The phase change material consists of antimony. Further, at least one of the dimensions of the phase change segment is smaller than 15 nanometers. Additional implementations of resistive memory devices include a related method, a related control unit, a related memory cell, and a related computer program product.SELECTED DRAWING: Figure 2
Inventors 10
- Koelmans, Wabe
- Abu Sebastian Aachen author as filed: Sebastian, Abu
- Jonnalagadda, Vara
- Salinga, Martin
- Kersting, Benedikt
- Wabe, Koelmans
- Abu, Sebastian
- Vara, Jonnalagadda
- Martin, Salinga
- Benedikt, Kersting
Inventors are linked to an Aachen author when surname and first name match exactly one author.
Applicants
- International Business Machines Corporation
- RHEINISCH-WESTFÄLISCHE TECHNISCHE HOCHSCHULE (RWTH) AACHEN RWTH Aachen University
- Ibm
- インターナショナル・ビジネス・マシーンズ・コーポレーション
- Int Business Maschines Corporation
Cited papers 0 in the database
Non-patent literature as cited (1)
- - Raoux et al., IBM J. Res. & Dev. 52(4/5), 465 (2008)